Effects of Carrier Heating on Raman Susceptibility of Weakly-Polar Semiconductor Magneto-Plasmas

Abstract

In this paper, we develop a mathematical model to study the effects of carrier heating induced by a laser beam on Raman susceptibility of weakly-polar semiconductor magneto-plasmas. Using coupled mode approach, we obtain expressions for the real and imaginary parts of Raman susceptibility (Re⁡( χ_R),Im⁡( χ_R)) under hydrodynamic and rotating-wave approximations. In order to validate the results, we perform numerical analysis for n-InSb crystal - CO2 laser system. We observed change of sign of Re⁡( χ_R) as well as Im⁡( χ_R) around resonances. The carrier heating induced by the intense laser beam modifies the momentum transfer collision frequency of plasma carriers and consequently the Raman susceptibility of the semiconductor magneto-plasma, which subsequently enhances Re⁡( χ_R) and Im⁡( χ_R), (ii) shifts the enhanced Re⁡( χ_R) and Im⁡( χ_R) towards smaller values of applied magnetic field, and (iii) broadens the applied magnetic field regime at which change of sign of Re⁡( χ_R) and Im⁡( χ_R) are observed. The analysis leads to better understanding of Raman nonlinearity of semiconductor plasma and suggests an idea of development of Raman nonlinearity based optoelectronic devices.

HIGHLIGHTS

• Effects of carrier heating on the real and imaginary parts of Raman susceptibility of weakly-polar semiconductor magneto-plasmas are investigated
• We observed alteration of sign of real and imaginary parts of Raman susceptibility around resonances
• Carrier heating induced by the intense laser beam:
  • Enhances real and imaginary parts of Raman susceptibility,
  • Shifts the enhanced real and imaginary parts of Raman susceptibility towards smaller values of applied magnetic field, and
  • Broadens the applied magnetic field regime at which sign alteration of real and imaginary parts of Raman susceptibility are observed.

GRAPHICAL ABSTRACT