Hashim, N. S. ., Poobalan, B. ., Zakaria, N. F. ., Natarajan, M. . and Shaari, S. . (2023) “The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications ”, Trends in Sciences. Nakhon Si Thammarat, Thailand, 20(6), p. 6648. doi: 10.48048/tis.2023.6648.