HASHIM, N. S. .; POOBALAN, B. .; ZAKARIA, N. F. .; NATARAJAN, M. .; SHAARI, S. . The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications . Trends in Sciences, Nakhon Si Thammarat, Thailand, v. 20, n. 6, p. 6648, 2023. DOI: 10.48048/tis.2023.6648. Disponível em: https://tis.wu.ac.th/index.php/tis/article/view/6648. Acesso em: 8 apr. 2026.