JAGTAP, S. M. .; GOND, V. J. . Modeling of 7 Nano Meter Fin Field Effect Transistor for Evaluation of Fringe & Oxide Capacitance. Trends in Sciences, Nakhon Si Thammarat, Thailand, v. 19, n. 2, p. 2051, 2022. DOI: 10.48048/tis.2022.2051. Disponível em: https://tis.wu.ac.th/index.php/tis/article/view/2051. Acesso em: 8 apr. 2026.