Hashim, N. S. ., Poobalan, B. ., Zakaria, N. F. ., Natarajan, M. ., & Shaari, S. . (2023). The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications . Trends in Sciences, 20(6), 6648. https://doi.org/10.48048/tis.2023.6648